Low Phase Noise X-band Dielectric Resonator Oscillator

In this article, an X-band low phase noise dielectric resonator oscillator is investigated. For this purpose, a dielectric resonator as a frequency stabilization section at the almost center frequency of ۱۲ GHz is designed. The active device is a packaged GaAs FET (an ATF-۳۶۰۷۷ pHEMT). Firstly, the ATF۳۶۰۷۷ microwave transistor has been biased. The substrate of this nonplanar oscillator is Rogers RT/Duroid ۵۸۸۰. Finally, the dielectric resonator oscillator has been introduced as a series feedback structure. This presented X-band dielectric resonator oscillator, operating at nearly ۱۲ GHz, exhibits a phase noise of -۷۱ dBc/Hz and -۱۳۳ dBc/Hz at ۱-kHz and ۱-MHz frequency offset, respectively. Also, the output power level of nearly ۷ dBm is achieved. The second and third harmonic power levels are more than ۵۰ dB and ۳۰ dB lower than the main harmonic power level.

Keywords:

X-band Oscillator , Dielectric Resonator , Microwave Transistor , Low Phase Noise