Mahdi Mohammadkhani - Department of Electrical Engineering, Iran University of Science and Technology (IUST), Tehran, Iran
Sattar Mirzakuchaki - Department of Electrical Engineering, Iran University of Science and Technology (IUST), Tehran, Iran
Seyyed Ahmad Mohades Kassai - Electrical Engineering Department, California State University, Long Beach, California, USA

AlxIn1-xSb and InSb layers have been grown by molecular beam epitaxy (MBE) on GaAs and InSb substrates with various orientations. Reflection high-energy electrondiffraction (RHEED) was used for in-situ monitoring of crystalline quality during growth. Quality and surface morphology of the grown layers was assessed by x-ray diffractometry (XRD), field emmission scanning electron microscopy (FE-SEM) and atomic force microscopy (AFM).Homoepitaxial InSb layers were grown on (111)A and (111)B InSb subtrates and photodiodes were fabricated by growing thinp-AlxIn1-xSb barriers between n-InSb and p-InSb layers. Heteroepitaxial InSb layers were grown on semi-insulating (001) GaAs substrates without using any buffer layer. Thisbuffer- free growth procedure speeds up the production process and eliminates the unwanted impurities at the expense of slight degradation of crystalline quality.

Molecular Beam Epitaxy (MBE), Indium Antimonide (InSb), Aluminum Indium Antimonide(AlxIn1-xSb), Heteroepitaxy