A Numerical Study of a New Four-layer-substrate Closing Device

Creating high power electrical pulses with sub nanosecond rise time is possible by using fast impact ionization process in closing four-layer-substrate devices. Fast impactionization in semiconductor devices is one of the quickest nonoptical pulse generation methods even in the range of less thannanosecond. In this paper electron-hole plasma generation and fast impact ionization mechanism of a four-layer-substrate device would be discussed by using numerical study and also physical model, Effective factors such as impurity concentration and substrate thickness in switching velocity, current peak,generated electron-hole plasma and residual voltage in device . This study provides several optimized characteristics in these switches.