Amin. Pak - Sadjad Institute for Higher Education, Mashhad, Iran
Khalil. Mafinezhad

In this paper Low Actuation Voltage RF MEMS capacitive shunt switches with different resonant frequencies for each switch are discussed. Advantages of such switches are lowloss performance (<0.4dB), high isolation (> 40dB) and High Capacitance ratio. The effect of various geometric dimensional parameters on theswitching behavior of proposed design using Ansoft HFSS software is investigated. The static and dynamic behavior of Switch developed in MATLAB. The mechanical model of the switch is discussed and calculations of different characteristics of the switch such as the pull-in voltage and spring constant are outlined.