Design and Analysis of a Millimeter Wave LNA Using Pospieszalsky Noise Model on CMOS Technology
Publish place: 21th Iranian Conference on Electric Engineering
Publish Year: 1392
نوع سند: مقاله کنفرانسی
زبان: English
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شناسه ملی سند علمی:
ICEE21_714
تاریخ نمایه سازی: 27 مرداد 1392
Abstract:
A low noise amplifier based on cascode topology at 60GHz has been presented where Pospieszalsky noise model in CMOS technology has been introduced. The amplifier is designedon 0.13μm CMOS technology and simulated using ADS software. The simulation results shows 19 dB gain and less than 8 dB noisefigure at 60 GHz. The excellent agreement between the analytical and simulation results confirms the accuracy and efficiency of the proposed approach
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Authors
Manizhe Zolfagharzade
Amirkabir University of Technology, Tehran, ۱۵۹۱۴, Iran