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Design and Analysis of a Millimeter Wave LNA Using Pospieszalsky Noise Model on CMOS Technology

بیست و یکمین کنفرانس مهندسی برق ایران
Year: 1392
COI: ICEE21_714
Language: EnglishView: 1,023
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Manizhe Zolfagharzade - Amirkabir University of Technology, Tehran, ۱۵۹۱۴, Iran
Abdolali Abdipour
Abbas Mohammadi


A low noise amplifier based on cascode topology at 60GHz has been presented where Pospieszalsky noise model in CMOS technology has been introduced. The amplifier is designedon 0.13μm CMOS technology and simulated using ADS software. The simulation results shows 19 dB gain and less than 8 dB noisefigure at 60 GHz. The excellent agreement between the analytical and simulation results confirms the accuracy and efficiency of the proposed approach


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Zolfagharzade, Manizhe and Abdipour, Abdolali and Mohammadi, Abbas,1392,Design and Analysis of a Millimeter Wave LNA Using Pospieszalsky Noise Model on CMOS Technology,21th Iranian Conference on Electric Engineering,Mashhad,

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