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Design and Analysis of a Millimeter Wave LNA Using Pospieszalsky Noise Model on CMOS Technology

عنوان مقاله: Design and Analysis of a Millimeter Wave LNA Using Pospieszalsky Noise Model on CMOS Technology
شناسه ملی مقاله: ICEE21_714
منتشر شده در بیست و یکمین کنفرانس مهندسی برق ایران در سال 1392
مشخصات نویسندگان مقاله:

Manizhe Zolfagharzade - Amirkabir University of Technology, Tehran, ۱۵۹۱۴, Iran
Abdolali Abdipour
Abbas Mohammadi

خلاصه مقاله:
A low noise amplifier based on cascode topology at 60GHz has been presented where Pospieszalsky noise model in CMOS technology has been introduced. The amplifier is designedon 0.13μm CMOS technology and simulated using ADS software. The simulation results shows 19 dB gain and less than 8 dB noisefigure at 60 GHz. The excellent agreement between the analytical and simulation results confirms the accuracy and efficiency of the proposed approach

کلمات کلیدی:
LNA, CMOS, millimeter wave, noise model, twoport noise theory

صفحه اختصاصی مقاله و دریافت فایل کامل: https://civilica.com/doc/208771/