Rabe’e Sharifi Rad - Sirjan University of Technologhy,kerman, Iran
Elnaz Ghodsvali - Amir Kabir University
Sima sinaei - Tehran University

Carbon-nanotube field-effect transistors (CNFETs)are becoming promising alternatives to the existing silicon technology due to their excellent electronic and uniquemechanical properties. Since Full-Adder (FA) is an important part of each processor, it is important to design a high performance FA. However the CNFET-based FA cells have more power than CMOS FA. In this paper, three high-speed and low power CNFET based FA cells are proposed fornanotechnology. Significant improvements are achieved in terms of speed, power consumption and PDP (Power-Delay-Product) in comparison with the other classical and state-ofthe- art CMOS and CNFET-based designs, existing in the literatures. The proposed FA cells work properly in low supply voltages

CNFET, Low-Voltage, Full-Adder, Low-Power, Nano Electronic