Kang Eng Siew - Faculty of Electrical Engineering, Universiti Teknologi Malaysia, ۸۱۳۱۰ Skudai, Johor, Malaysia.
M.J Kiani - Faculty of Electrical Engineering, Universiti Teknologi Malaysia, ۸۱۳۱۰ Skudai, Johor, Malaysia-Dept. of electrical engineering ,islamic azad university,yasooj branch, yasooj,Iran
S.N Hedayat - Faculty of Electrical Engineering, Universiti Teknologi Malaysia, ۸۱۳۱۰ Skudai, Johor, Malaysia.
M. T. Ahmadi - Faculty of Electrical Engineering, Universiti Teknologi Malaysia, ۸۱۳۱۰ Skudai, Johor, Malaysia- Dept. of electrical engineering, Urmia University of Technology

A fundamental knowledge on the quantum limit for low dimensional device is vital for devicescharacterization. Thus in this paper, the intrinsic velocity in two dimensional strained Si is developed using theFermi Dirac distribution function of order zero, . The impact of germanium content in relaxed SiGesubstrate, carrier concentration and temperature on the intrinsic velocity is extensively studied. It is demonstratedthat the intrinsic velocity is the Fermi velocity in the degenerate regime, which varies linearly with the carrierconcentration but is a weak logarithmic function of temperature. However, for nondegenerate statistic, it is stronglydependent on the temperature that appropriates to the thermal velocity

Intrinsic velocity, strained Si, two dimensional, Fermi Dirac, carrier concentration, temperature