Multibit Ferroelectric Memory Using HfO₂-Based FeFETs in MirrorBit Architecture: A Perspective Study

This article presents an overview of multibit ferroelectric memory utilizing hafnium oxide (HfO₂)-based ferroelectric field-effect transistors (FeFETs) within the MirrorBit architecture. As the demand for high-density, non-volatile memory solutions increases, HfO₂'s ferroelectric properties emerge as a promising candidate due to its compatibility with existing CMOS technology and its ability to retain data at lower power consumption levels. The MirrorBit architecture, which allows for multiple bits to be stored in a single memory cell, enhances data storage efficiency while maintaining robust performance. This study explores the technological advancements and mechanisms that enable multibit storage through FeFETs, highlighting benefits such as improved scalability, reduced area footprint, and enhanced speed compared to traditional memory technologies. Furthermore, this article discusses the implications of these advantages for next-generation memory applications, addressing challenges and future research directions in this rapidly evolving field.

Keywords:

FeFET , MirrorBit , TCAD , Non-Volatile Memory , Ferroelectric Memory , Hafnium dioxide , Multibit Memory