The Vital Role of Ultra Thin Silicon Oxide Gate Dielectrics
Publish place: Iranica Journal of Energy and Environment، Vol: 3، Issue: 4
Publish Year: 1391
نوع سند: مقاله ژورنالی
زبان: English
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شناسه ملی سند علمی:
JR_IJEE-3-4_006
تاریخ نمایه سازی: 1 اردیبهشت 1393
Abstract:
In dry thermal oxidation process with Si, the growth rate of the initial parts of the reaction is currently modeled with additional terms; besides the usual linear parabolic was time dependent. However,due to limitation in the process set up, it was found in literature and in patent; these methods did notproduce oxides less than 1.5 nm thick, often assumed equal to the native thickness. Attempt made to grow oxides in a furnacewith dry oxygen, including cycles of cleaning and annealing in Ar. The effects limit the thickness to about 1.5 nm was investigated. These oxides were evaluated for the resulting quality of the interface of the oxides,with low temperature layer-by-layer methods
Keywords:
Nanotransistor /Ultra thin film/ Gate dielectric/ Silicon oxide
Authors
y abouk
Islamic Azad University, Sari Branch, Sari, Iran
m roodbari
National Iran Oil Distribution Company (NIOPDC), Sari Region
a bahari
Department of Physics, University of Mazandaran, Babolsar, Iran