The role of QD density on output power and photon density and optical gain for three states InGaAs/GaAs quantum-dot laser
Publish place: Conference on Electrical Engineering and Sustainable Development with a focus on new achievements in electrical engineering
Publish Year: 1392
نوع سند: مقاله کنفرانسی
زبان: English
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شناسه ملی سند علمی:
EOESD01_183
تاریخ نمایه سازی: 11 خرداد 1393
Abstract:
This paper presents numerical model that based on rate equations are calculated by using fourth order Rung-Kutta method and investigate three levels such as ground state and excited state and upper continuum state of an InGaAs/GaAs quantum dot (QD) laser system. By using of direct-relaxation model, we obtain rate equation for photons and escape and relaxation of carriers for each state. With comparison results and with respect to origin of lasing, we can have a qualitative understanding optimizing values for lasing in each level for the variations of output power and photon density and optical gain with different QD densities, then we obtain optimized values for these three states.
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Authors
Azam Shafieenezhad
Msc, Department of physics, University of Guilan , Guilan
Esfandiar Rajaei
PhD, Department of physics, University of Guilan, Guilan
Saeed Yazdani
Msc, Department of physics, University of Guilan, Guilan
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