ElectricalC haracteristicso f DoubleG ateS OI MOSFET with Metal Source/Drain
Publish place: 15th Iranian Conference on Electric Engineering
Publish Year: 1386
نوع سند: مقاله کنفرانسی
زبان: English
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شناسه ملی سند علمی:
ICEE15_397
تاریخ نمایه سازی: 17 بهمن 1385
Abstract:
We have stutlied the electrical characteristics of a Schottlcy Barrier Double Gate SOI MOSFET (SB-DG-SOI-MOSFET). This structure can operate both in accumulation and inversion mocle and the main current mechanism for this device is tr,tnneling. As Schottlcy barrier height becomes smaller in highly scalecl (SB-DG_ SOI-MOSFET), its performance improves over a similar structure having doped source/drain.
Keywords:
Double Gate SOI MOSFET. Drain Induced Barrier Thinning , Electrical characteristics , Gate Induced Drain Leakage , Schottky Source Drain MOSFET