A novel Majority Gate By Using Ambipolar CNTFETs
Publish Year: 1393
نوع سند: مقاله کنفرانسی
زبان: English
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شناسه ملی سند علمی:
CSITM01_553
تاریخ نمایه سازی: 10 شهریور 1393
Abstract:
In this paper, presented a new majority gate by using ambipolar cntfet transistors. To design this majoritygate, which include new AND-2 and OR-2 gates used the minimum number of transistors. Also for designnew AND-2 and OR-2 gates, we have benefited from ambipolar transistors. As regards, ambipolartransistors have double-gate property and the most important feature of these transistors are transmissiongate, also, the proposed gate include smallest number of transistors, expected our gate designed to be thefastest and smallest gate.
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Authors
Amir Shadmanpour
Department of Computer Engineering, Gachsaran branch, Islamic Azad university,Gachsaran, Iran.
Reza Rezaei
Department of Computer Engineering, Gachsaran branch, Islamic Azad university,Gachsaran, Iran