Modeling of etching nano-surfaces of indium phosphide

This paper describes a mechanism for obtaining a regular porous structure InP, which is to use the method ofphotoelectrochemical etching. Through the use of simulation etching at the nanoscale, it is possible to get a regularuniform grid of nanopores on the surface of indium phosphide, which allows us to understand the mechanisms and theestablishment of technological regimes anodic structures indium phosphide to produce a variety of devices.

Keywords:

InP , porous , modeling , nano-surfaces