Production of Tantalum Nitride Thin Films in different Nitrogen gas ratio

A set of layers of tantalum nitride were diposited in different ratios of nitrogen in plasma sputtering depositionprocess, whileTarget voltage increaced with increasing Nitrogen ratio.X-ray diffraction results of samples, deposited ingaseous nitrogen ratio of 10% and 20%, showed that in the nitrogen ratio of 10% Non-stoichiometric hexagonal Ta6N2.57was formed while in the ratio of 20% stoichiometric cubic TaN was formed. Meanwhile the surface morphology resultsillustrated that in the lower Nitrogen ratio the Surface Roughness was lower.Hardness test results also revealed that inNitrogen ratio of 10%, hardness of the layers were maximum

Keywords:

Thin Layer , Tantalum Nitride , Atomic Force Microscopy , Target voltage , XRD