transistor with considering edge relaxation
عنوان مقاله: transistor with considering edge relaxation
شناسه ملی مقاله: ICNN05_778
منتشر شده در پنجمین کنگره بین المللی نانو و فناوری نانو (ICNN2014) در سال 1393
شناسه ملی مقاله: ICNN05_778
منتشر شده در پنجمین کنگره بین المللی نانو و فناوری نانو (ICNN2014) در سال 1393
مشخصات نویسندگان مقاله:
A.M Abdolmalehi - School of Electrical and Computer Engineering, Tarbiat Modares University (TMU) Tehran, Iran
D Fathi - School of Electrical and Computer Engineering, Tarbiat Modares University (TMU) Tehran, Iran
A Rostami - School of Electrical and Computer Engineering, Tarbiat Modares University (TMU) Tehran, Iran
خلاصه مقاله:
A.M Abdolmalehi - School of Electrical and Computer Engineering, Tarbiat Modares University (TMU) Tehran, Iran
D Fathi - School of Electrical and Computer Engineering, Tarbiat Modares University (TMU) Tehran, Iran
A Rostami - School of Electrical and Computer Engineering, Tarbiat Modares University (TMU) Tehran, Iran
We present an atomistic 3-D self- consistent solution of Poisson and Schrödinger equations, based on thenon-equilibrium Green’s Function (NEGF) formalism and tight- binding approximation, for a defected Graphenenanoribbon field effect transistor (GNRFET). Moreover, we consider the effect of V2 (555-777) defect and show that the edge relaxation and applied defect intensely affect the transistor performance. In this study, the devicecharacteristics are studied and compared with the perfect GNRFET.
کلمات کلیدی: Graphene nanoribbon, Field effect transistor; V2 (555-777) defect, NEGF; Edge relaxation
صفحه اختصاصی مقاله و دریافت فایل کامل: https://civilica.com/doc/397951/