A.M Abdolmalehi - School of Electrical and Computer Engineering, Tarbiat Modares University (TMU) Tehran, Iran
D Fathi - School of Electrical and Computer Engineering, Tarbiat Modares University (TMU) Tehran, Iran
A Rostami - School of Electrical and Computer Engineering, Tarbiat Modares University (TMU) Tehran, Iran

We present an atomistic 3-D self- consistent solution of Poisson and Schrödinger equations, based on thenon-equilibrium Green’s Function (NEGF) formalism and tight- binding approximation, for a defected Graphenenanoribbon field effect transistor (GNRFET). Moreover, we consider the effect of V2 (555-777) defect and show that the edge relaxation and applied defect intensely affect the transistor performance. In this study, the devicecharacteristics are studied and compared with the perfect GNRFET.

Graphene nanoribbon, Field effect transistor; V2 (555-777) defect, NEGF; Edge relaxation