Firoz Hemmati - Electrical Engineering Faculty Sahand University of Technology Tabriz, Iran
Esmaeil Najafi aghdam - Electrical Engineering Faculty Sahand University of Technology Tabriz, Iran
Nima Souzandeh - Electrical Engineering Faculty Sahand University of Technology Tabriz, Iran

A low-power ultra-wideband (UWB) low-noise amplifier (LNA) is proposed exploiting a current-reused and forward body bias techniques operating in the frequency range of 3.1-10.6 GHz. The first stage of the UWB LNA employs a resistive shunt feedback topology in conjunction with a parallel LC load to achieve wideband input matching and low noise figure simultaneously. By incorporating the current reused configuration and forward body bias technique in the second stage, the proposed UWB LNA can operate at reduced supply voltage and power consumption while maintaining high gain, low noise. The proposed LNA is designed for UWB applications using 180 nm TSMC CMOS process. The implemented ultra-wideband LNA presents a minimum power gain of 17.65 dB, a high reverse isolation of −31.5 dB and a good input / output return losses are better than −10.1 dB in the frequency range of 3.1–10.6 GHz. An excellent noise figure (NF) of 2.35–2.58 dB was obtained in the required band with a power dissipation of 5.92 mW under a supply voltage of 1 V. An input-referred third-order intercept point (IIP3) is −18 dBm at 6 GHz.

Low noise amplifier, Ultra-wideband, Resistive shunt feedback, Current reused, forward body bias, Low power design