Dual-band Power Divider using Substrate Integrated Waveguide (SIW) and a Notch Band

In this paper, the design and simulation of a dual-band power divider using substrate integrated waveguide (SIW) and a notch band is presented. In this circuit, a filtering power divider is obtained by etching the periodic butterfly radial slots on the top layer of SIW transition. Two L-type resonators are used to transform the filtering power divider to the dual-band power divider. This two L-type resonators has the duty of creating the notch band. This structure has the advantages of the low cost, good return loss, low insertion loss, and compatibility with planar circuits. The simulated results show the frequency range of the first passband is 3.47-4.02 GHz and the frequency range of the second passband is 4.35-4.88 GHz when the return loss of the input port is better than 20 dB. Moreover, in these frequency ranges, the maximum insertion loss is 1 dB.

Keywords:

Substrate integrated waveguide (SIW) , power divider , dual-band power divider , L-type resonator , butterfly radial slot