Dual-band Power Divider using Substrate Integrated Waveguide (SIW) and a Notch Band

Publish Year: 1394
نوع سند: مقاله کنفرانسی
زبان: English
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شناسه ملی سند علمی:

NSOECE02_201

تاریخ نمایه سازی: 30 دی 1394

Abstract:

In this paper, the design and simulation of a dual-band power divider using substrate integrated waveguide (SIW) and a notch band is presented. In this circuit, a filtering power divider is obtained by etching the periodic butterfly radial slots on the top layer of SIW transition. Two L-type resonators are used to transform the filtering power divider to the dual-band power divider. This two L-type resonators has the duty of creating the notch band. This structure has the advantages of the low cost, good return loss, low insertion loss, and compatibility with planar circuits. The simulated results show the frequency range of the first passband is 3.47-4.02 GHz and the frequency range of the second passband is 4.35-4.88 GHz when the return loss of the input port is better than 20 dB. Moreover, in these frequency ranges, the maximum insertion loss is 1 dB.

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Authors

ali reza Moznebi

M.Sc. Student, Department of Electrical Engineering, Shahid Bahonar University of Kerman, Kerman, Iran

kambiz afrooz

Assistant Professor, Department of Electrical Engineering, Shahid Bahonar University of Kerman, Kerman, Iran

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