Saeid Masoumi - Department of Electrical & Electronic Engineering, Tasouj Branche, Islamic Azad University, Tasouj, Iran
Ali Mahmoodzadeh - Department of Electrical & Electronic Engineering, Tasouj Branche,Islamic Azad University, Tasouj, Iran
Majid zarabadipour - Department of Electrical & Electronic Engineering, Tasouj Branche,Islamic Azad University, Tasouj, Iran
Ali rostami - Department of Electrical & Electronic Engineering, Tasouj Branche,Islamic Azad University, Tasouj, Iran

The purpose of this paper is to use software package ATK-SE package, in combination with virtual Nano-Lab (VNL), can be used to investigate a Nano-scale transistor. For the transistor structure wewill use a graphene junction device and nanowire, where ATK is used to investigate the properties of a similar system. The effect of various parameters on the structure of graphene Nano-ribbon and nanowire checked.GNRFET, consists of 3 regions and forms a metal-semiconductor-metal junction. By applying a gate potential to the central region, the system can function as a field effect transistor,which is able to calculate properties, Transmission spectrum, Temperature dependent conductance, Conductance and Current as function of gate potential and temperature. So in this paper, the devices design and simulation parameters are associated with improved performance

ATK-SE package, GNRFET, VNL, NWFET, Bipolar