Gholamhosein Moloudian - Department of Electrical Engineering, Islamic Azad University, Behbahan Branch, Behbahan, Iran
Mosayeb Nouri - Department of Electrical Engineering, Islamic Azad University, Behbahan Branch, Behbahan, Iran

In this paper, we focus on designing and simulation of a gallium arsenide semiconductor laser with an active zone. We've used aluminum gallium arsenide material in the sides with the mole fraction of 0.5 (Al0.5Ga0.5As). For simulation we have used the SILVACO software of ATLAS simulator environment. First, we review a structure similar to the laser and then to achieve proper optical confinement and carrier confinement, we use several structures to design the laser. Simulation results show that the laser emits photons at a wavelength of 0.87 micrometers. The obtained results indicate that laser shows its proper performance in IR light.

laser, cavity, semiconductor, active region