B. Fakhr - Department of Electrical Engineering, Neyshabur Branch ,Islamic Azad University Neyshabur ,Iran
S.E. Hosseini - Department of Electrical Engineering, Ferdowsi University of Mashhad Mashhad, Iran

In this paper, we study the effect of channel length of the junctionless transistor on the device performance through device simulation. The transistor parameters such as threshold voltage, transconductance, subthreshold slope are investigated

FinFET, Junctionless, SOI, SCEs, Vth, subthreashold slop