A very low-power 8 GHz frequency divider in 180nm CMOS technology

Publish Year: 1394
نوع سند: مقاله کنفرانسی
زبان: English
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شناسه ملی سند علمی:

ELEMECHCONF03_0444

تاریخ نمایه سازی: 9 مرداد 1395

Abstract:

A very low-consumption 8 GHz frequency divider in 180nm CMOS technology is presented. The MOS switching loss and transistor sizing optimization techniques were implemented to reduce power consumption and increase the speed of the proposed circuit, leading to an increase in the overall performance of the system. In addition used several trade-off between supply voltage, gain, voltage swings, bandwidth, distortion, input offset, linearity and power consumption parameters lead to a multi-dimensional optimization problems. Such trade-off throughout the design process requires intuition and experience to reach an acceptable compromise. The frequency divider speed is about 8 GHz. A clock input voltage was applied at a similar speed for simulation purposes. Power consumption of the circuit was obtained as less than 114 mW (supply voltage: 1.8V).The H-SPICE software was used for simulation and further analysis of the results.

Authors

Mohammad bagher Mohammadi

Department of Electrical engineering, Mehriz Branch, Islamic Azad University, Mehriz, Iran

Mohammad jafar Taghizadeh۲Marvast

Department of Electrical engineering, Mehriz Branch, Islamic Azad University, Mehriz, Iran.