SCEs Investigation of Junctionless FinFET in Different Channel Lengthes
Publish place: کنفرانس بین المللی مهندسی و علوم کاربردی
Publish Year: 1394
نوع سند: مقاله کنفرانسی
زبان: English
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شناسه ملی سند علمی:
ICEASCONF01_126
تاریخ نمایه سازی: 9 مرداد 1395
Abstract:
scaling length for Tri-gate SOI junctionless FinFET through 3-D device simulation is presented. SCEs of FinFETs can be controlled by changing the gate length. Changing channel length is between 10 to 100 nm. output characteristics, transfer characteristic, threshold voltage, subthreshold slope and drain induced barrier lowering (DIBL), gm, ION/IOFF ratio, ro are investigated.
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Authors
Batol Fakhr
Department of Electrical Engineering, Neyshabur Branch, Islamic Azad University, Neyshabur, Iran
Seyed Ebrahim Hosseini
Department of Electrical Engineering, Mashhad Branch, Ferdowsi University, Mashhad, Iran