Masoud Baghelani - Sahand University of Technology

RF sputtering is one of the most spread and utilized methods for thin film deposition in microelectronics and ma terial science. By means of capacitive coupled RF power to sputtering chamber, it is possible to discharge the gas and achieve a bias high voltage for ion acceleration. A 13.56 MHz RF generator is designed. Its oscillator, pre- and power amplifier stages are described. A matching network is used to transfer the maximal generated power to the plasma.

sputtering, RF sputtering, plasma, power amplifier, oscillator, matching network