BAND GAP OF THREE LAYERED PHOSPHORENE UNDER INPLANE STRAIN
Publish place: The third national conference on new technologies in the chemical, petrochemical and Iran Nanotechnology
Publish Year: 1395
نوع سند: مقاله کنفرانسی
زبان: English
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شناسه ملی سند علمی:
TCPCO03_121
تاریخ نمایه سازی: 16 شهریور 1395
Abstract:
We have investigated tuning band gap of three layers of phosphorene with applying uniaxial and biaxial strains using first principle calculations based on density functional theory. The results show a three layers of phosphorene is a narrow direct semiconductor with 0.23 eV energy gap and in-plane strains significantly change the bandstructure. Direct-indirect semiconductor and semiconductor-metal transitions induce with uniaxial strains, symmetric and antisymmetric biaxial strains. Dispersion relation at low energy has a linear spectrum shape, Dirac-shaped dispersion, in metal zone for uniaxial strain along armchair and zigzag directions and for symmetric strain. Consequently, applying a reasonable strain one can be able controls the gap size and electronic properties of three layers of phosphorene
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Authors
Mansoureh Pashangpour
Department of Physics, Islamshahr Branch, Islamic Azad University, Tehran, Iran
Vahid Ghaffari
Islamic Azad University, Central Tehran Branch, Tehran, Iran