Comparing the Adjustability of Terahertz Temperature-Dependent Defect Mode with a One-Dimensional Photonic Crystal Containing PbSe, Hg1-xCdxTe, and Pb1-xSnxTe Defects

In this study, the temperature-dependent properties of defect mode in a semiconductor-dielectric photonic crystal were separately investigated for three defects including PbSe, Hg1-xCdxTe, and Pb1-xSnxTe. Using the transfer matrix and based on the transmission spectrum, these investigations were conducted on the structure of (Si/SiO2)N defect (SiO2/Si)N. With the temperature-dependent electric permittivity of defect layer, the defect mode would be adjustable to temperature. Given the defect loss, the intensity of defect mode would considerably decrease at higher temperatures for all three defects.

Keywords:

One-Dimensional Photonic Crystal , Terahertz Defect Mode , Transmission Spectrum