Mahdi Momeni - Department of Electrical Engineering, Amirkabir University of Technology, Tehran, Iran,

In this paper, employed new techniques and novel method to improve properties of a single-stage operational amplifier. In the proposed circuit, the memristor is used for reducing consumption power and area, and enhance gain. To evaluate the usefulness of the circuit, HSPICE simulation results are provided using a 90 nm BSIM level 54 mixed-signal CMOS technology, in 3 corners (TT, FF, and SS) and different temperatures (27 °C, 85 °C and -40 °C) . According to the results (proposed CMOS-memristor circuit), area and power, have been reduced and gain and phase margin increased.

Operational amplifiers, CMOS-memristor, fully-differential, single-stage