Improvement of Efficiency of a triple junction InGaP/GaAs/Ge solar cell by CdS anti reflector layer
عنوان مقاله: Improvement of Efficiency of a triple junction InGaP/GaAs/Ge solar cell by CdS anti reflector layer
شناسه ملی مقاله: IRCEM01_189
منتشر شده در نخستین کنفرانس ملی تحقیقات بین رشته ای در مهندسی کامپیوتر، برق، مکانیک و مکاترونیک در سال 1395
شناسه ملی مقاله: IRCEM01_189
منتشر شده در نخستین کنفرانس ملی تحقیقات بین رشته ای در مهندسی کامپیوتر، برق، مکانیک و مکاترونیک در سال 1395
مشخصات نویسندگان مقاله:
Javad Karamdel - Electronics Department, Faculty of Engineering, Islamic Azad University- South Tehran Branch, Iranj-karamdel@azad.ac.ir
Bita Farhadi - Young Researchers and Elite Club, Kermanshah Branch, Islamic Azad University- Kermanshah Branch, Iran
خلاصه مقاله:
Javad Karamdel - Electronics Department, Faculty of Engineering, Islamic Azad University- South Tehran Branch, Iranj-karamdel@azad.ac.ir
Bita Farhadi - Young Researchers and Elite Club, Kermanshah Branch, Islamic Azad University- Kermanshah Branch, Iran
The structure and performance parameters of a triple junction InGaP/GaAs/Ge solar cell including a CdS antireflection top layer are studied and optimized using Silvaco ATLAS software to obtain maximum possible value of efficiency .At first multi-junction solar cells with high efficiency are designed for specific applications like satellites and spatial discovering, but currently, they are the lowest cost selection for using in Terrestrial concentrator. Moreover, photovoltaic is a technology and research area that is related to the solar cells application in a electricity generation for practical using, where an optimum efficiency of ۴۲.۸۱% is achieved.
کلمات کلیدی: Electricity,Photovoltaic, solar cells, Fill factor,multi-junction
صفحه اختصاصی مقاله و دریافت فایل کامل: https://civilica.com/doc/539869/