Abbas Khanmohammadi - Bu-Ali Sina University, Hamadan, Iran
Rahim Faez - Sharif University of Technology, Tehran, Iran

This paper describes the design, fabrication and measurement of I2L parameters. For fabrication of I2L cells with a high performance (βR≥10, maximum delay time 50nsec in the current of 150μA) the characteristics of Siwafer ( type and impurity concentration of epilayer and substrate , the thickness of epi-layer ) and the different steps of fabrication process (including temperatures, diffusion times and masks) are determined. The results of the measurement of process parameters (the sheet resistance of different layers and the junctions depth) will be presented. In order to measure I2L cell parameters, the typical circuits (including inverter and ringoscillator) are fabricated and tested. The obtained results show the reverse current gain (βR) of 12 and delay time of 50nsec in the current of 150μA for an individual I2L cell with Fanout=1.

I2L Technology, Epitaxial Layer, Reverse Current Gain (βR), Injector, Fanout