Crate a Op-Amp CMOS Low-Voltage High Gain for Switch with 90nm Technology
Publish Year: 1395
نوع سند: مقاله کنفرانسی
زبان: English
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شناسه ملی سند علمی:
NPECE01_285
تاریخ نمایه سازی: 6 بهمن 1395
Abstract:
This article discusses the Crate a low-voltage, high gain, fully differential CMOS Op-amp in a low voltage (VDD = 1.0V) 90nm CMOS process. This Op-amp is ideally suited for switch circuits and simulations show a unity gain band width of 650MHz with 1pF load capacitor and a DC gain of more than 107dB. The phase margin is around 58 degree centigrade. The circuit topology is a two-stage folded cascode structure with regulated cascodes for gain boosting
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Authors
Abolfazl sodagary
MSc in Power Electronics