Electrical and Photoconductor Properties for Au/ZnO/ p-Si Photoconductive Detectors

Zinc oxide thin films was deposited by chemical spray pyrolysis (CSP) at 400 °C substrate temperature and different thickness (60, 80, and 100) nm on the texturized p-Si wafer to fabricate Au/ZnO/p-Si photoconductive detectors. Electrical and photoconductor properties are investigated for the samples. The electrical properties of heterojunction were obtained by I-V (dark and illuminated). The results demonstrated that all the samples show strong rectifying behavior. The saturation current and the ideality factor increases with increasing of thickness.It is observed that illumination of the junction, more carriers are generated and forward current increases. The spectral response of detector was calculated. The maximum value of responsivity occurred at wavelength between (385-395) nm. The values of specific detectivity (D*) and quantum efficiency (Q.E) increases and shift to higher wavelength with increase of thickness. So we can say from this result the (Au/ZnO/p-Si) is photodetector in (UV) region.

Keywords:

Au , ZnO , p-Si , photodetector , detectivity , quantum efficiency