Very Low-Voltage Operation Capability of CMOS Ring Oscillators and Logic Gates
عنوان مقاله: Very Low-Voltage Operation Capability of CMOS Ring Oscillators and Logic Gates
شناسه ملی مقاله: ICEE12_013
منتشر شده در دوازدهیمن کنفرانس مهندسی برق ایران در سال 1383
شناسه ملی مقاله: ICEE12_013
منتشر شده در دوازدهیمن کنفرانس مهندسی برق ایران در سال 1383
مشخصات نویسندگان مقاله:
Sasan Naseh - McMasterUniversity
Mehdi Kazemeini
M Jamal Deen
خلاصه مقاله:
Sasan Naseh - McMasterUniversity
Mehdi Kazemeini
M Jamal Deen
The operation of a CMOS ring oscillator with supply voltage values as low as ~80 mV are experimentally investigated. The low-voltage operation of the ring oscillator based on a single inverter, is analyzed. The use of body voltage of MOS transistors as a means for controlling the frequency of oscillation of CMOS ring oscillators are demonstrated. The feasibility of very low-voltage operation of
logic CMOS gates such as NAND gate is confirmed with simulation.
کلمات کلیدی: Low-voltage, low-power CMOS, subthreshold, ring oscillator, VCO, substrate biasing
صفحه اختصاصی مقاله و دریافت فایل کامل: https://civilica.com/doc/59785/