Optimization of carbon nanotube field-effect transistors (CNTFET) and compare them to CMOS silicon

Publish Year: 1394
نوع سند: مقاله ژورنالی
زبان: English
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شناسه ملی سند علمی:

JR_UJRSET-3-4_002

تاریخ نمایه سازی: 13 تیر 1396

Abstract:

In this paper, a brief review of CNT carbon nanotube transistors will be explained and thenthe optimization methods will be discussed. Details of AC and DC transistor CNFET andCharacteristics of CNFET at high temperature also shows that unlike MOSFET flo below thethreshold for this type of component temperature is reduced, thus using CNFET at hightemperatures can be more quickly and less leakage current is achieved. Processes for thesynthesis of CNT are not complete, a subject of controversy in the field fluctuations of densityin CNT growth, as well as an analysis of the credit CNFET because sway density of CNTcould lead to complete failure CNFET, so to evaluate it, and we later CNFET applications incomparison with CMOS logic circuits using the latest research, we ll CNFET.

Authors

Mahdi Salimi

Department of Engineering, Ardabil Branch, Islamic Azad University, Ardabil, Iran

Kamran Khoddam

Department of Engineering, Ardabil Branch, Islamic Azad University, Ardabil, Iran

Darya Morakkabatchy

Department of Engineering, Ardabil Branch, Islamic Azad University, Ardabil, Iran

Maryam Pornadem

Department of Engineering, Ardabil Branch, Islamic Azad University, Ardabil, Iran