HOSSEN ABDIZADEH - School of Metallurgy & Materials Engineering, College of Engineering, University of Tehran, Tehran, Iran
REZA EBRAHIMIFARD - School of Metallurgy & Materials Engineering, College of Engineering, University of Tehran, Tehran, Iran
MOHAMMADREZA GOLOBOSTANFARD - School of Metallurgy & Materials Engineering, College of Engineering, University of Tehran, Tehran, Iran

In the present study, nano structured ZnO thin film has been synthesized via sol-gel method by the use of spin coating technique. Different thicknesses of the films achieved by repeating spin coating process for 2, 4, 6 and 8 times. After spin coating, all samples have been calcined at 500 °C for 1 hr. The main scope of this research concentrates on the effect of thin film thickness on structural and optoelectronic properties of the film. For this reason, X-ray diffraction (XRD) has been conducted to obtain the phase composition, lattice parameters and lattice strain for samples with different thicknesses. The results confirm the presence of ZnO hexagonal wurtzite phase and shown an ascending trend for cfa. Field emission scanning electron microscopy (FESEM) has been used for morphological aspects of thin films and illustrated an average grain size of ~30 and 60 mm for single and multilayer thin films respectively. In order to investigate optoelectronic properties of thin films, UV-Vis spectroscopy was employed. The UV-Vis data shows thickness dependent optoelectronic properties of the films.

ZnO thin film; Sol-gel; Nanostructured material; Optoelectronic properties