Hassan Saffari - Faculty of New Sciences and Technologies, University of Tehran, Tehran, Iran
Reza Askari Moghadam - Faculty of New Sciences and Technologies, University of Tehran, Tehran, Iran
Mohammad Tahmasebi pour - Faculty of New Sciences and Technologies, University of Tehran, Tehran, Iran

RF MEMS switches have attracted more attention in recentyears. They are widely used in telecommunication systems,radars, satellites and medical and industrial applications. Inthis paper, a DC contact RF MEMS switch is proposed witha new mechanical structure which reduces the actuatingvoltage to 7V which is better than many other DC contactRF MEMS switches introduced already. New switchstructure causes the spring constant to decrease to 4.4N/m.The switch is made of gold with the thickness of 2um. Theproposed structure is simulated by Comsol in order toevaluate mechanical specifications. The maximum VonMises stress of the switch is 9.03MPa which is acceptablefor silicon made structures.

DC contact RF MEMS switch- Low actuationvoltage- Spring structure- Von Mises Stress