Analysis on Radio-Frequency Modeling of Double- and Single-Gate Square-Shaped Extended Source TFETs
Publish place: Journal of Electrical Systems and Signals، Vol: 3، Issue: 1
Publish Year: 1394
نوع سند: مقاله ژورنالی
زبان: English
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شناسه ملی سند علمی:
JR_JESS-3-1_002
تاریخ نمایه سازی: 19 شهریور 1396
Abstract:
In this paper, the radio-frequency (RF) performances and small-signal parameters of double-gate (DG) square-shaped extended source tunneling field-effect transistors (TFETs) are investigated and compared with those of single-gate (SG) square-shaped extended source TFETs in terms of their cut-off and maximum oscillation frequencies and small-signal parameters. By using of a nonquasi-static (NQS) radio-frequency model, the small-signal parameters have been extracted. The results show that the DG square-shaped extended source TFET has higher transconductance, cut-off and maximum oscillation frequencies than single gate structure. The modeled Y-parameters are in close agreement with the extracted parameters for high frequency range up to the cut-off frequency. Results suggest that the DG square-shaped extended source TFETs seem to be the most optimal ones to replace MOSFET for ultralow power applications and RF devices.
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Authors
Saeid Marjani
Department of Electrical Engineering, Ferdowsi University of Mashhad, Iran.
Seyed Ebrahim Hosseini
Department of Electrical Engineering, Ferdowsi University of Mashhad, Iran.