Bit Swapping Linear Feedback Shift Register For Low Power Application Using 130nm Complementary Metal Oxide Semiconductor Technology
عنوان مقاله: Bit Swapping Linear Feedback Shift Register For Low Power Application Using 130nm Complementary Metal Oxide Semiconductor Technology
شناسه ملی مقاله: JR_IJE-30-8_003
منتشر شده در شماره 8 دوره 30 فصل August در سال 1396
شناسه ملی مقاله: JR_IJE-30-8_003
منتشر شده در شماره 8 دوره 30 فصل August در سال 1396
مشخصات نویسندگان مقاله:
N Binti Mohd Hanib - Department of Electrical, Electronic and Systems Engineering, Universiti Kebangsaan Malaysia, Bangi, Selangor, Malaysia
F Choong - School of Engineering and Physical Science, Heriot-Watt University, Jalan Venna, Putrajaya, Malaysia.
M Bin Ibne Reaz - Department of Electrical, Electronic and Systems Engineering, Universiti Kebangsaan Malaysia, Bangi, Selangor, Malaysia
N Kamal - Department of Electrical, Electronic and Systems Engineering, Universiti Kebangsaan Malaysia, Bangi, Selangor, Malaysia
خلاصه مقاله:
N Binti Mohd Hanib - Department of Electrical, Electronic and Systems Engineering, Universiti Kebangsaan Malaysia, Bangi, Selangor, Malaysia
F Choong - School of Engineering and Physical Science, Heriot-Watt University, Jalan Venna, Putrajaya, Malaysia.
M Bin Ibne Reaz - Department of Electrical, Electronic and Systems Engineering, Universiti Kebangsaan Malaysia, Bangi, Selangor, Malaysia
N Kamal - Department of Electrical, Electronic and Systems Engineering, Universiti Kebangsaan Malaysia, Bangi, Selangor, Malaysia
Bit swapping linear feedback shift register (BS-LFSR) is employed in a conventional linear feedback shirt register (LFSR) to reduce its power dissipation and enhance its performance. In this paper, an enhanced BS-LFSR for low power application is proposed. To achieve low power dissipation, the proposed BS-LFSR introduced the stacking technique to reduce leakage current. In addition, three different architectures to enhance the feedback element used in BS-LFSR was explored. The pass transistor merged with transistor stack method yielded a better reduction in power dissipation compared to pass transistor design and NAND gate design. The BS-LFSR was designed in Mentor Graphic – TSMC Design Kit Environment using 130nm complementary metal oxide semiconductor (CMOS) technology. The proposed 4-bit BS-LFSR achieved an active area of 1241.1588um2 and consumed only 53.8844nW with total power savings of 19.43%. The proposed design showed superiority when compared with the conventional LFSR and related work in reducing power dissipation and area.
کلمات کلیدی: Bit Swapping Linear Feedback Shift Register,Stacking Technique,Low Power
صفحه اختصاصی مقاله و دریافت فایل کامل: https://civilica.com/doc/685716/