Jafar hazrati yadekouri - Islamic Azad University sepidan Branch, sepidan, Iran
Amir Reza Estakhrian Haghighi - Islamic Azad University sepidan Branch, sepidan, Iran

A ultra wide-band CMOS amplifier is proposed and simulated in 130 nm CMOS process Inductive degeneration is applied to reduce noise figure without significantly raising the architecture’s power requirement. Additionally, a resistive shunt feedback technique is applied with an RL peaking load to flatten the gain throughout design band. This topology allows the amplifier to have a very large bandwidth of 7-17 GHz with a low minimum noise figure of 2.6 dB (at 10 GHz). NF also remains below 3.4 dB across the 10 GHz bandwidth. The design exhibits gain which peaks to 17.34 dB and has a low power demand of 13.7 mW (from a 1.2 V supply). Comparing the circuit performance to previously published amplifiers shows that it achieves reduction in NF and power dissipation while maintaining a flatter gain in X-K band

Wideband, CMOS amplifier, Resistive feedback