Najmeh Valed Karimi - Electrical Engineering department, Young Researchers and Elite Club, Ahvaz Branch, Islamic Azad University, Ahvaz, Iran
Yaghoub Pourasad - Electrical Engineering department, Urmia University of Technology, Urmia, Iran

A tunneling carbon nanotube field effect transistor with linear doped (LD-T-CNTFET) is presented for investigating band to band tunneling and improving the device characteristics with a non-equilibrium Green’s function (NEGF) method. The LD-T-CNTFET structure includes two linear doped regions between the intrinsic channel and the highly doped source and drain regions which are called the linear doped drain and source T-CNTFET. Simulations have shown that LD-T-CNTFET characteristics are attributed to the linear doped region length. In comparison with a T-CNTFET, an LD-T-CNTFET with linear doped drain and source regions has shown a smaller off current (IOFF), a smaller sub-threshold swing, a lower on-current and tunneling current

Band to band tunneling (BTBT), Tunneling carbon nanotube field effect transistor (T-CNTFET), linear doped drain and source (LD), non-equilibrium Green’s function (NEGF)