Gh Sareminia - aSAiran-Electronic Components Industry (ECI)-Optoelectronic industry P.O.Box ۱۹۵۷۵ – ۱۹۹, Tehran, Iran. Institute of Physics, Azerbaijan University
M Hajian - aSAiran-Electronic Components Industry (ECI)-Optoelectronic industry P.O.Box ۱۹۵۷۵ – ۱۹۹, Tehran, Iran.
GH Valizadeh - aSAiran-Electronic Components Industry (ECI)-Optoelectronic industry P.O.Box ۱۹۵۷۵ – ۱۹۹, Tehran, Iran
SH Eminov - Institute of Physics, Azerbaijan University

In this article the performance of photodiodes made on epitaxial grown layers of p–InSb on n-type InSb substrates is reported. The effect of increasing Cd atomic weigh percent on p- type carrier concentration and mobility at 77K is also discussed. In our epitaxial growth method, a ramp cooling technique was used. Finally by improving growth parameters such as growth temperature, prior cleaning of B-face (Sb)n-InSb substrates and different cooling rates, adequate epitaxial layers of p–InSb on n–InSb<111> and consequently highly sensitive photodiodes have been obtained .A high detectivety for photodiodes fabricated by liquid phase epitaxial (LPE) method was measured using optoelectronic tests. Several other tests such as Hall Effect, thickness measurements, I–V and x-ray diffraction (XRD) were also performed and morphology images will be presented in this paper.

InSb epitaxial layer, LPE, Ramp cooling, Growth temperature, homogenization temperature, cleaning InSb