Quantum Current Modeling in Nano-transistors with a Quantum Dot

Carbon quantum dots (CQDs) serve as a new class of ‘zero dimensional’ nanomaterials in the carbon class with sizes below 10 nm. As light emitting nanocrystals, QDs are assembled from semiconductor materials, from the elements in the periodic groups of II-VI, III-V or IV-VI. Thebasis of Single electron devices (SEDs) is controllable single electron transfer between small conducting islands . In this paper quantum current of double barrier single electron transistor (SET) is modelled and models current-voltage characteristic based on quantum transport and theelectronic properties due to the dependence on structural parameter are analyzed.

Keywords:

Single Electron Transistor , Double Barrier , Quantum Current , Fullerene , Island