Effect of substrate temperature on ZnS films prepared by thermal evaporation technique

The nanocrystalline ZnS semiconducting thinfilms of 500 nm thickness have been deposited on glasssubstrate at different substrate temperatures (Ts) by thermalevaporation technique. The structural property of depositedthin films has been measured by X-ray diffraction, scanningelectron microscopy, and Energy dispersive analysisof X-ray. The electrical and optical properties of thin filmshave been determined by D.C. two point probe and ultravioletvisible spectroscopy measurements. The X-raydiffraction patterns show that thin films have cubic structure.The electrical resistivity of thin films has decreasedfrom 0.36x 10(6) to 0.15x10(6) Ω cm as substrate temperatureincreases from 300 to 400 K. It shows that filmshave semiconducting in nature. The grain size and electricalconductivity of the thin films have increased as thedeposition temperature increased while dislocation density,activation energy, and band gap decreased. The minimumband gap 3.43 eV has been found.