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Temperature dependence of resistivity of RFeAsO compounds

عنوان مقاله: Temperature dependence of resistivity of RFeAsO compounds
شناسه ملی مقاله: JR_JTAP-10-2_005
منتشر شده در شماره 2 دوره 10 فصل June در سال 1395
مشخصات نویسندگان مقاله:

S Mukherjee - Department of Physics, The University of Burdwan, Golapbag, Burdwan, West Bengal ۷۱۳ ۱۰۴, India
Papri Dasgupta - Saha Institute of Nuclear Physics, ۱/AF Bidhannagar, Kolkata, West Bengal ۷۰۰ ۰۶۴, India
Asok Poddar - Saha Institute of Nuclear Physics, ۱/AF Bidhannagar, Kolkata, West Bengal ۷۰۰ ۰۶۴, India
Chandan Mazumdar - Saha Institute of Nuclear Physics, ۱/AF Bidhannagar, Kolkata, West Bengal ۷۰۰ ۰۶۴, India

خلاصه مقاله:
The resistivity (q) data for RFeAsO compounds(R = Ce, Pr, Nd, Sm), in the temperature (T) range35–315 K have been analyzed to identify the dominantscattering mechanisms. Close to the room temperature, thesystem appears to be a metal with low electron density, andthe electron–phonon scattering is the dominant one. Atlower temperatures, electron–electron scattering plays animportant role. In an intermediate temperature region,unlike metallic system, dq/dT is negative; and q(-1) varies asln T as in a state of weak localization. We look into theorigin of negative dq/dT. The analysis of q(T) data belowthe SDW transition temperature shows the presence ofelectron–electron interaction in addition to a SDW energygap, and also gives an estimate of the SDW energy gap.

کلمات کلیدی:
Oxypnictides Resistivity Transport Weak localization

صفحه اختصاصی مقاله و دریافت فایل کامل: https://civilica.com/doc/763631/