Electrophoretic deposition of uniform graphene oxide thin film on poroussilicon substrate
Publish place: 12th annual electrochemical seminar of Iran
Publish Year: 1395
نوع سند: مقاله کنفرانسی
زبان: English
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شناسه ملی سند علمی:
ELECTROCHEMISTRY012_178
تاریخ نمایه سازی: 5 آذر 1397
Abstract:
In present work, a uniform thin film of graphene oxide (GO) was deposited on porous silicon(PS) substrate. GO was successfully synthesized using the modified Hummer’s method and wasefficiently deposited onto photo-electrochemically etched PS substrate using electrophoreticdeposition (EPD) technique. The morphology and structural properties of synthesized anddeposited layer was investigated using field emission scanning electron microscopy and Ramanspectroscopy. The results showed that high surface area of porous structure facilitated depositionof GO. Thus, a uniform and high quality thin film of GO was deposited on PS substrate.
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Authors
Nima Naderi
Department of Semiconductors, Materials and Energy Research Center (MERC), Karaj, Iran
Sanaz Rasi
Department of Semiconductors, Materials and Energy Research Center (MERC), Karaj, Iran
Morteza Moradi
Department of Semiconductors, Materials and Energy Research Center (MERC), Karaj, Iran