Effect of B, Al and Ga Impurities on Structural, Electrical and Optical Properties of BeO Nanotube

A branch of optic that explain the nonlinear properties of dielectric polarization P asfunction of electric field E is well known as NLO optics. Nonlinear optical materials have beenthe subject of intense research in the past decades because of their potential applications intechnological applications such as optical switching, signal processing, information storage,optical communication, laser technology, chemical and biological species detection [1,2]. In thisresearch the structure, electrical and optical properties of BeO and M@BeO (M=B, Al and Ga)were calculate to explore the effect of B, Al and Ga atoms in BeO nanotube properties. As theresult it was shown that in presence of B, Al and Ga impurities, the Eg of BeO nanotube wasreduced. Reduction in Eg is more considerable for B case. In continue, the polarizability ofpristine and doped BeO nanotubes was calculated and it was shown that the polarizability of itslightly increases by these doping. Finally, the hyper polarizability of pristine and B, Al and Gadoped BeO nanotubes were calculated and interestingly it was illustrated that the doping ofimpurity in nanotubes increases its hyper polarizability to more than hundred time of pristinevalues. Additionally slightly more increase in hyperpolarizability was seen in Ga doping.

Keywords:

BeO Nanotube , Doping , Hyper Polarizability , NLO