Competition of Contact Resistance and Ferroelectric Gate Oxide on the Performance of Double-Gate MoS2 Monolayer FET

In this work, A Ferroelectric-FET (Fe-FET) with two dimensional MoS2 as the channel material is explored. Fe-FET with contact resistance is compared with no contact resistance. Top of the barrier model along with ferroelectric model is used to investigate performance of Fe-FET. Contact resistance can highly affect current-voltage characteristic. FET with contact resistance needs higher voltage for saturation. Ferroelectric with negative capacitance increases gate capacitance and decreases sub-threshold swing. It is shown sub-threshold swing can be tuned with ferroelectric thickness.

Keywords:

Contact resistance , Ferroelectric , Top of the Barrier , MoS2