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Optical Field Enhancement Factor of Silicon and Indium Phosphide Nano-cavities

عنوان مقاله: Optical Field Enhancement Factor of Silicon and Indium Phosphide Nano-cavities
شناسه ملی مقاله: NCNNN03_004
منتشر شده در کنفرانس ملی نانو ساختارها علوم و مهندسی نانو در سال 1398
مشخصات نویسندگان مقاله:

Nassibeh Ebadi - Assistant Professor, Department of Electrical Engineering, Roshdiyeh Higher Education Institute, Tabriz, Iran

خلاصه مقاله:
Nano cavities based on silicon and indium phosphide materials have been compared inthis study, considering field intensity enhancement factor. The results of FDTD basedsimulations declare that the Si nano-cavity improves confined optical field about 7.7times higher than the InP based nano-cavity. The introduced dielectric nano-cavitiessupport resonance wavelength at about λ = 1.55 μm.

کلمات کلیدی:
Photonic crystal, Nano cavity, Enhancement factor, FDTD

صفحه اختصاصی مقاله و دریافت فایل کامل: https://civilica.com/doc/961053/