Optical Field Enhancement Factor of Silicon and Indium Phosphide Nano-cavities
عنوان مقاله: Optical Field Enhancement Factor of Silicon and Indium Phosphide Nano-cavities
شناسه ملی مقاله: NCNNN03_004
منتشر شده در کنفرانس ملی نانو ساختارها علوم و مهندسی نانو در سال 1398
شناسه ملی مقاله: NCNNN03_004
منتشر شده در کنفرانس ملی نانو ساختارها علوم و مهندسی نانو در سال 1398
مشخصات نویسندگان مقاله:
Nassibeh Ebadi - Assistant Professor, Department of Electrical Engineering, Roshdiyeh Higher Education Institute, Tabriz, Iran
خلاصه مقاله:
Nassibeh Ebadi - Assistant Professor, Department of Electrical Engineering, Roshdiyeh Higher Education Institute, Tabriz, Iran
Nano cavities based on silicon and indium phosphide materials have been compared inthis study, considering field intensity enhancement factor. The results of FDTD basedsimulations declare that the Si nano-cavity improves confined optical field about 7.7times higher than the InP based nano-cavity. The introduced dielectric nano-cavitiessupport resonance wavelength at about λ = 1.55 μm.
کلمات کلیدی: Photonic crystal, Nano cavity, Enhancement factor, FDTD
صفحه اختصاصی مقاله و دریافت فایل کامل: https://civilica.com/doc/961053/