Strong Optical Filed Intensity Improvement Introducing InGaAsP Quantum Wells in InP Nanocavity
عنوان مقاله: Strong Optical Filed Intensity Improvement Introducing InGaAsP Quantum Wells in InP Nanocavity
شناسه ملی مقاله: NCNNN03_005
منتشر شده در کنفرانس ملی نانو ساختارها علوم و مهندسی نانو در سال 1398
شناسه ملی مقاله: NCNNN03_005
منتشر شده در کنفرانس ملی نانو ساختارها علوم و مهندسی نانو در سال 1398
مشخصات نویسندگان مقاله:
Nassibeh Ebadi - Assistant Professor, Department of Electrical Engineering, Roshdiyeh Higher Education Institute, Tabriz, Iran
خلاصه مقاله:
Nassibeh Ebadi - Assistant Professor, Department of Electrical Engineering, Roshdiyeh Higher Education Institute, Tabriz, Iran
This paper presents the optical characteristics of a quantum well doped InP nanocavity.The resonance wavelength of the nanocavity and the optical field intensity is calculatedbefore and after presence of the quantum wells. The resulting huge filed intensity ofabout 1.2×108 respect to the incident field is the effect of quantum wells placed invicinity of center of nanocavity.
کلمات کلیدی: Nanocavity, Quantum well, Photonic crystal
صفحه اختصاصی مقاله و دریافت فایل کامل: https://civilica.com/doc/961054/