M. Vali - Institute of Nanoscience and Nanotechnology, University of Kashan, Kashan, Iran
D. Dideban - Depertment of Electrical and Computer Engineering, University of Kashan, Kashan, Iran
N. Moezi - Technical and Vocational University, Kashan, Iran

In this paper, in order to evaluate new materials for design and simulation of the field effect transistors in nano dimensions, we simulate and investigate the electronic properties of a field effect transistor based of topological insulator. Since the energy gap in the channel region of this transistor is adjustable by a perpendicular magnetic field, first by obtaining the transfer characteristics, we analyze the DC characteristics such as Ion/Ioff ratio and the threshold voltage. Moreover, we evaluate the short channel effects (SCEs) including subthreshold slope (SS) and drain induced barrier lowering (DIBL).The obtained results for (SS) and (DIBL) for m=1 show the values of 8.24mV/dec and 0.064, respectively, which are very suitable for transistor applications. Finally we achieve the analog characteristics of the simulated field effect transistor such as transconductance, output conductance, output resistance and voltage gain and study the parameters affecting these figures of merits.

Field effect transistor, topological insulator, Ion/Ioff ratio, threshold voltage, short channel effects, subthreshold slope, analog characteristics, transconductance, output conductance, output resistance, voltage gain