Saeid Masoumi - Tasouj Branch, Islamic Azad University, Tasouj, Iran dept. Electrical & Electronic Engineering Tasouj, Iran
Ali Rostami - Tasouj Branch, Islamic Azad University, Tasouj, Iran dept. Electrical & Electronic Engineering Tasouj, Iran

Field-effect transistors based on graphene are as a promising chemical and biological sensors. In order for graphene to fulfill this promise and become a material for the large-scale manufacture of high-performance electronics, large-area, highquality graphene on substrates amenable to electrical device operation and sensors fabrication is needed. Reduced graphene oxide are interesting materials for creating graphene sheets in Nano scale because of unique electrical, mechanical, geometrical, and biocompatible properties. So the purpose of this paper is to provide in detail how reduced graphene oxide suspension (100 μg RGO/1 ml NMP) was developed, and creation the graphenesheets. We show that its electronic structure is captured in its Raman spectrum that clearly evolves with the number of layers. The Raman spectrum of graphene consists of a number of peaks which are well characterized and understood.

RGO; suspension; Raman; sheet; monolayer